?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc1674 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter ratings units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 20 ma p c collector power dissipation 250 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 30 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 20 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 4 v i cbo collector cut-off current v cb =30v, i e =0 0.1 a i ebo emitter cut-off current v eb =4v, i c =0 0.1 a h fe dc current gain v ce =6v, i c =1ma 40 240 v be (on) base-emitter on voltage v ce =6v, i c =1ma 0.72 v v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma 0.1 0.3 v f t current gain bandwidth product v ce =6v, i c =1ma 400 600 mhz c ob output capacitance v cb =6v, i e =0, f=1mhz 1.2 pf c crbb? collector-base time constant v ce =6v, i c =1ma f=31.9mhz 12 15 ps nf noise figure v ce =6v, i c =1ma r s =50 ? , f=100mhz 3.0 5.0 db g pe power gain v ce =6v, i c =1ma, f=100mhz 18 22 db classification r o y h fe 40 ~ 80 70 ~ 140 120~ 240 ksc1674 tv pif amplifier, fm tuner rf amplifier, mixer, oscillator ? high current gain bandwidth product : f t =600mhz (typ.) ? high power gain : g pe =22db at f=100mhz ? suffix ?-c? means center collector (1. emitter 2. collector 3. base) 1. emitter 2. base 3. collector to-92 1
?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc1674 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product 0 2 4 6 8 101214161820 0 2 4 6 8 10 12 14 16 18 20 i b = 110ua i b = 100ua i b = 90ua i b = 80ua i b = 70ua i b = 60ua i b = 50ua i b = 40ua i b = 30ua i b = 20ua i b = 10ua i c [ma], collector current v ce [v], collector-emitter voltage 110 10 100 1000 v ce = 6v h fe , dc current gain i c [ma], collector current 0.1 1 10 0.01 0.1 1 10 v be (sat) v ce (sat) i c =10i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 v ce = 6v i c [ma], collector current v be [v],base-emitter voltage 110100 0.1 1 10 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage 1 10 100 10 100 1000 10000 v ce =6v f t [mhz], current gain-bandwidth product i c [ma], collector current
?2001 fairchild semiconductor corporation ksc1674 rev. a1, june 2001 typical characteristics (continued) figure 7. input admittance (yie) vs. collector current figure 8. forward transfer admittance (yfe) vs. collector current figure 9. reverse transfer admittance (yre) vs. collector current figure 10. output admittance (yoe) vs. collector current figure 11. input admittance (yib) vs. collector current figure 12. forward transfer admittance (yfb) vs. collector current 0.1 1 10 100 0.01 0.1 1 10 100 10.7mhz 100mhz v ce = 6v bie gie bie gie gie[ms], conductance bie[ms], susceptance i c [ma], collector current 0.1 1 10 100 1 10 100 1000 v ce = 6v 10.7mhz 100mhz -bfe -bfe gfe gfe gfe[ms], conductance bfe[ms], susceptance i c [ma], collector current 0.1 1 10 100 0.5 0.4 0.3 0.2 0.1 0.0 100mhz -g re -b re 10.7mhz 100mhz 10.7mhz -g re -g re v ce = 6v g re [ms], conductance b re [ms], susceptance i c [ma], collector current 0.1 1 10 100 0.01 0.1 1 b oe 10.7mhz 10.7mhz g oe g oe 100mhz 100mhz b oe v ce = 6v g oe [ms], conductance b oe [ms], susceptance i c [ma], collector current 0.1 1 10 100 1 10 100 1000 100mhz 100mhz 10.7mhz 10.7mhz v cb = 6v -b ib -b ib g ib g ib g ib [ms], conductance b ib [ms], susceptance i c [ma], collector current 0.1 1 10 100 1 10 100 1000 100mhz 10.7mhz 10.7mhz b fb b fb -g fb -g fb g fb [ms], conductance b fb [ms], susceptance i c [ma], collector current
?2001 fairchild semiconductor corporation ksc1674 rev. a1, june 2001 typical characteristics (continued) figure 13. reverse transfer admittance (yrb) vs. collector current figure 14. reverse transfer admittance (yre) vs. frequency figure 15. forward transfer admittance (yfe) vs. frequency figure 16. output admittance (yoe) vs. frequency figure 17. power gain and noise figure vs. emitter current figure 18. input admittance (yie) vs. frequency 0.1 1 10 100 0.01 0.1 1 v cb = 6v 10.7mhz 10.7mhz 100mhz 100mhz -b rb -b rb -g rb -g rb g rb [ms], conductance b rb [ms], susceptance i c [ma], collector current 10 100 1000 0.01 0.1 1 10 v ce = 6v i c = 1ma -b re -g re g re [ms], conductance b re [ms], susceptance f[mhz], frequency 10 100 1000 1 10 100 1000 v ce = 6v i c = 1ma -b fe g fe y axis title x axis title 10 100 1000 0.01 0.1 1 10 v ce = 6v i c = 1ma b oe g oe g oe [ms], conductance b oe [ms], susceptance i c [ma], collector current 0.1 1 10 0 5 10 15 20 25 30 v ce =6v f=100mhz nf g pe g pe [db], power gain i e [ma], emitter current 10 100 1000 0.1 1 10 100 v ce = 6v i c = 1ma g ie b ie g ie [ms], conductance b ie [ms], susceptance f[mhz], frequency
?2001 fairchild semiconductor corporation ksc1674 rev. a1, june 2001 typical characteristics (continued)
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc1674 dimensions in millimeters
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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product folder - fairchild p/n ksc1674 - npn epitaxial silicon transistor ksc1674cota full production $0.05 to-92 3 tape reel ksc1674yta full production $0.05 to-92 3 tape reel * 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///e|/new/html/ksc1674.html (2 of 2) [7/27/02 11:08:53 am]
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